StrataFlash TE28F128

P33B85ES

5646A01Q

256-Mbit (x8/x16)

Performance
— 110/115/120/150 ns Initial Access Speed
— 125 ns Initial Access Speed (256 Mbit density only)
— 25 ns Asynchronous Page mode Reads
— 30 ns Asynchronous Page mode Reads (256Mbit density only)
— 32-Byte Write Buffer
—6.8 µs per byte effective programming time

Software

— Program and Erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible

Security

— 128-bit Protection Register
— 64-bit Unique Device Identifier
— 64-bit User Programmable OTP Cells
— Absolute Protection with V
—  Individual Block Locking
—  Block Erase/Program Lockout during Power Transitions

Architecture

— Multi-Level Cell Technology: High  Density at Low Cost
— High-Density Symmetrical 128-Kbyte Blocks
—256 Mbit (256 Blocks) (0.18µm only)
—128 Mbit (128 Blocks)
—64 Mbit (64 Blocks)
—32 Mbit (32 Blocks)

Quality and Reliability

— Operating Temperature: -40 °C to +85 °C
— 100K Minimum Erase Cycles per Block
— 0.18 µm ETOX™ VII Process (J3C)
— 0.25 µm ETOX™ VI Process (J3A)

Packaging and Voltage

— 56-Lead TSOP Package
— 64-Ball Intel

Easy BGA Package

— Lead-free packages available
— 48-Ball Intel VF BGA Package (32 and = GN PEN 64 Mbit) (x16 only)
— V = 2.7 V to 3.6 V CC
— V = 2.7 V to 3.6 V

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